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Stanford Electronics offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method, allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality.
Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).
Gallium Arsenide (GaAs) crystal has good chemical stability, hardness and is resistant to harsh environments. GaAs can be supplied as ingots and polished wafers, both conducting and semi-insulating GaAs wafer, mechanical grade, and epi ready grades are all available.
|
Growth |
LEC / VGF |
|
Diameter |
Ø 2" / Ø 3" / Ø 4" |
|
Thickness |
350 um ~ 625 um |
|
Orientation |
<100> / <111> / <110> or others |
|
Conductivity |
P - type / N - type / Semi-insulating |
|
Dopant |
Zn / Si / undoped |
|
Surface |
One side polished or two sides polished |
|
Concentration |
1E17 ~ 5E19 cm-3 |
|
TTV |
<= 10 um |
|
Bow / Warp |
<= 20 um |
|
Grade |
Epi polished grade / mechanical grade |
- Light-emitting diodes
- Laser diodes
- Photovoltaic devices
- High Electron Mobility Transistor
- Heterojunction Bipolar Transistor
Related articles:
|
Growth |
LEC / VGF |
|
Diameter |
Ø 2" / Ø 3" / Ø 4" |
|
Thickness |
350 um ~ 625 um |
|
Orientation |
<100> / <111> / <110> or others |
|
Conductivity |
P - type / N - type / Semi-insulating |
|
Dopant |
Zn / Si / undoped |
|
Surface |
One side polished or two sides polished |
|
Concentration |
1E17 ~ 5E19 cm-3 |
|
TTV |
<= 10 um |
|
Bow / Warp |
<= 20 um |
|
Grade |
Epi polished grade / mechanical grade |
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